supertex inc. supertex inc. www.supertex.com doc.# dsfp-vn0104 c081913 vn0104 features ? free from secondary breakdown ? low power drive requirement ? ease of paralleling ? low c iss and fast switching speeds ? excellent thermal stability ? integral source-drain diode ? high input impedance and high gain applications ? motor controls ? converters ? ampliiers ? switches ? power supply circuits ? drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) general description this enhancement-mode (normally-off) transistor utilizes a vertical dmos structure and supertexs well-proven, silicon-gate manufacturing process. this combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coeficient inherent in mos devices. characteristic of all mos structures, this device is free from thermal runaway and thermally-induced secondary breakdown. supertexs vertical dmos fets are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. n-channel enhancement-mode vertical dmos fet yy = year sealed ww = week sealed = ?green? packaging sivn 0 104 yyww absolute maximum ratings parameter value drain-to-source voltage bv dss drain-to-gate voltage bv dgs gate-to-source voltage 20v operating and storage temperature -55 o c to +150 o c absolute maximum ratings are those values beyond which damage to the device may occur. functional operation under these conditions is not implied. continuous operation of the device at the absolute rating level may affect device reliability. all voltages are referenced to device ground. to-92 product markingpackage may or may not include the following marks: si or pin coniguration to-92 gate source drain product summary bv dss /bv dgs r ds(on) (max) i dss (min) 40v 3.0 2.0a typical thermal resistance package ja to-92 132 o c/w ordering information part number package option packing VN0104N3-G to-92 1000/bag VN0104N3-G p002 to-92 2000/reel VN0104N3-G p003VN0104N3-G p005 VN0104N3-G p013 VN0104N3-G p014 -g denotes a lead (pb)-free / rohs compliant package. contact factory for wafer / die availablity. devices in wafer / die form are lead (pb)-free / rohs compliant. downloaded from: http:///
2 supertex inc. www.supertex.com doc.# dsfp-vn0104 c081913 vn0104 electrical characteristics (t a = 25 o c unless otherwise speciied) sym parameter min typ max units conditions notes: ? i d (continuous) is limited by max rated t j . switching waveforms and test circuit 90% 10% 90% 90% 10% 10% pulse generator vdd r l output d.u. t. t (on) t d(on) t (off) t d(off) t r input input output 10v vdd r gen 0v 0v t f bv dss drain-to-source breakdown voltage 40 - - v v gs = 0v, i d = 1.0ma v gs(th) gate threshold voltage 0.8 - 2.4 v v gs = v ds , i d = 1.0ma v gs(th) change in v gs(th) with temperature - -3.8 -5.5 mv/ o c v gs = v ds , i d = 1.0ma i gss gate body leakage - - 100 na v gs = 20v, v ds = 0v i dss zero gate voltage drain current - - 1.0 a v gs = 0v, v ds = max rating - - 100 v ds = 0.8 max rating, v gs = 0v, t a = 125c i d(on) on-state drain current 0.5 1.0 - a v gs = 5.0v, v ds = 25v 2.0 2.5 - v gs = 10v, v ds = 25v r ds(on) static drain-to-source on-state resistance - 3.0 5.0 v gs = 5.0v, i d = 250ma - 2.5 3.0 v gs = 10v, i d = 1.0a r ds(on) change in r ds(on) with temperature - 0.70 1.0 %/ o c v gs = 10v, i d = 1.0a g fs forward transductance 300 450 - mmho v ds = 25v, i d = 500ma c iss input capacitance - 55 65 pf v gs = 0v, v ds = 25v, f = 1.0mhz c oss common source output capacitance - 20 25 c rss reverse transfer capacitance - 5.0 8.0 t d(on) turn-on delay time - 3.0 5.0 ns v dd = 25v, i d = 1.0a, r gen = 25 t r rise time - 5.0 8.0 t d(off) turn-off delay time - 6.0 9.0 t f fall time - 5.0 8.0 v sd diode forward voltage drop - 1.2 1.8 v v gs = 0v, i sd = 1.0a t rr reverse recovery time - 400 - ns v gs = 0v, i sd = 1.0a notes: 1. all d.c. parameters 100% tested at 25 o c unless otherwise stated. (pulse test: 300s pulse, 2% duty cycle.) 2. all a.c. parameters sample tested. thermal characteristics package i d (continuous) ? i d (pulsed) power dissipation @t c = 25 o c i dr ? i drm to-92 350ma 2.0a 1.0w 350ma 2.0a downloaded from: http:///
3 supertex inc. www.supertex.com doc.# dsfp-vn0104 c081913 vn0104 typical performance curves gate drive dynamic characteristics q g (nanocoulombs) v gs (volts) 10 8 6 4 2 0 0 0.2 0.4 0.6 0.8 1.0 v ds = 10v 40 pf 40v 80 pf -50 0 50 100 150 1.1 1.0 0.9 bv dss variation with temperature b vdss (normalized) t j ( o c) on-resistance vs. drain current r ds(on) () i d (amperes) 0 0.5 1.0 1.5 2.0 2.5 5.0 4.0 3.0 2.0 1.0 0 v gs = 5.0v v gs = 10v tr ansfer characteristics v gs (volts) i d (amperes) 0 2 4 6 8 10 2.5 2.0 1.5 1.0 0.5 0 t a = -55 o c 25 o c v ds = 25v 125 o c v gs(th) (normalized) r ds(on) (normalized) v (th) and r ds variation with temperature 1.6 1.4 1.2 1.0 0.8 0.6 -50 0 50 100 150 v (th) @ 1.0ma r ds @ 10v, 1.0a 1.9 1.6 1.3 1.0 0.7 0.4 t j ( o c) r ds @ 5.0v, 0.25a capacitance vs. drain-to-source voltage 100 75 50 25 0 c (picofarads) 0 10 20 30 40 f = 1.0mhz c iss c oss c rss v ds (volts) downloaded from: http:///
4 supertex inc. www.supertex.com doc.# dsfp-vn0104 c081913 vn0104 typical performance curves (cont.) thermal response characteristics thermal resistance (normalized) t p (seconds) 1.0 0.8 0.6 0.4 0.2 0 to -92 p d = 1.0w t c = 25 o c 0.001 0.01 0.1 1.0 10 output characteristics v ds (volts) i d (amperes) 0 10 20 30 40 2.5 2.0 1.5 1.0 0.5 0 v gs = 10v 8.0v6.0v 4.0v s aturation c haracteristics v ds (volts) 0 2.0 4.0 6.0 8.0 10 2.5 2.0 1.5 1.0 0.5 0 i d (amperes) transconductance vs. drain current g fs (siemens) i d (amperes) 1.0 0.8 0.6 0.4 0.2 0 0 0.2 0.4 0.6 0.8 1.0 v ds = 25v t a = -55 o c 25 o c 125 o c power dissipation vs. case temperature t c ( o c) p d (watts) 2.0 1.0 0 0 25 50 75 100 125 150 to -92 maximum rated safe operating area v ds (volts) i d (amperes) 0.1 1.0 10 100 10 1.0 0.1 0.01 to -92 (dc) t c = 25 o c 3.0v 5.0v 7.0v 9.0v v gs = 10v 8.0v6.0v 4.0v 3.0v 5.0v 7.0v 9.0v downloaded from: http:///
supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate ?product liability indemnification insurance agreement.? supertex inc . does not assume responsibility for use of devices described, and limits its liabilit y to the replacement of the devices determined defective due to workmanship. no responsibility is assumed for possible omissions and inaccuracies. circuitry and specifications are subject to change without notice. for the latest product specifications refer to the supertex inc . (website: http//www .supertex.com) ?2013 supertex inc. all rights reserved. unauthorized use or reproduction is prohibited. supertex inc. 1235 bordeaux drive, sunnyvale, ca 94089 t el: 408-222-8888 www.supertex.co m 5 vn0104 (the package drawing(s) in this data sheet may not relect the most current speciications. for the latest package outline information go to http://www.supertex.com/packaging.html .) doc.# dsfp-vn0104 c081913 3-lead to-92 package outline (n3) symbol a b c d e e1 e e1 l dimensions (inches) min .170 .014 ? .014 ? .175 .125 .080 .095 .045 .500 nom - - - - - - - - - max .210 .022 ? .022 ? .205 .165 .105 .105 .055 .610* jedec registration to-92. * this dimension is not speciied in the jedec drawing. ? this dimension differs from the jedec drawing. drawings not to scale. supertex doc.#: dspd-3to92n3, version e041009. seatingplane 1 2 3 front view side view bottom view e1 e d e1 l e c 1 2 3 b a downloaded from: http:///
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